Comparison of metal Schottky contacts on n-Ge (100) at different annealing temperatures

Abstract

SiOC films made by the inductively coupled plasma chemical vapor deposition were researched the relationship between the dielectric constant and the chemical shift. SiOC film had the main Si-O-C bond with the molecule vibration mode in the range of 930∼1230 cm-1 which consists of C-O and Si-O bonds related to the cross link formation according to the dissociation and recombination. The C-O bond originated from the elongation effect by the neighboring highly electronegative oxygen atoms at terminal C-H bond in Si-CH3 of 1270 cm-1. However, the Si-O bond was formed from the second ionic sites recombined after the dissociation of Si-CH3 of 1270 cm-1. Increment of Si-O bond in the Si-O-C main bond contributed to increase the hardness and decrease the roughness because of the decreasing of the carbon content witch is related to the space effect. The dielectric constant of SiOC film was decreased by lowering the polarization which consists of the ionic and electronic polarity. Increment of Si-O bond in a right shoulder at the main bond was interpreted by the red shift observed in FTIR spectra. Moreover, the increment of Si-O bond and decrement of carbon content induced to decrease the ionic polarity and then decreased the dielectric constant.