Please use this identifier to cite or link to this item: https://cris.library.msu.ac.zw//handle/11408/1617
Title: Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO
Authors: Mtangi, W.
Nel, J.M.
Auret, F.D.
Chawanda, Albert
Diale, M.
Nyamhere, C.
Keywords: Hall effect; Surface conduction; Zinc interstitials; Annealing; Shallow donors
Issue Date: 2012
Publisher: Elsevier
Series/Report no.: Physica B: Condensed Matter;Vol. 407, No. 10; p. 1624–1627
Abstract: We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zni related and possibly H-complex related and (54.5±0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, XZn. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) [1]. Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60×1017 cm−3 at 200 °C to 4.37×1018 cm-3 at 800 °C.
URI: hhttp://www.sciencedirect.com/science/article/pii/S0921452611009926
http://hdl.handle.net/11408/1617
ISSN: 0921-4526
Appears in Collections:Research Papers

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